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| AP9T15GH/J Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Capable of 2.5V gate drive Single Drive Requirement RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50m 12.5A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 20 16 12.5 8 60 12.5 0.1 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Units /W /W Data and specifications subject to change without notice 200908052-1/4 AP9T15GH/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.02 10 5 1 2 8 55 10 3 360 70 50 1.67 Max. Units 50 80 1.5 1 25 100 8 580 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF o Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VDS=VGS, ID=250uA VDS=5V, ID=10A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=16V ID=10A VDS=16V VGS=4.5V VDS=10V ID=10A RG=3.3,VGS=5V RD=1 VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s Min. - Typ. 17 9 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP9T15GH/J 50 40 T C =25 C 40 o T C = 150 o C ID , Drain Current (A) 5.0V 4.5V 30 ID , Drain Current (A) 5.0V 4.5V 30 3.5V 20 20 3.5V 2.5V 10 10 2.5V V G =1.5V V G =1.5V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.8 43 I D = 5.2 A T C =25 o C Normalized RDS(ON) 1.6 I D =6A V G =4.5V RDS(ON) (m ) 41 1.4 39 1.2 37 1.0 35 0.8 33 0 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 10 8 6 IS(A) T j =150 o C 4 T j =25 o C Normalized VGS(th) (V) 1.5 1.0 0.5 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9T15GH/J f=1.0MHz 14 1000 12 I D =10A V DS =10V V DS =12V V DS =16V C (pF) 100 VGS , Gate to Source Voltage (V) C iss 10 8 6 C oss C rss 4 2 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 100us 10 0.2 ID (A) 0.1 1ms 10ms 100ms DC T c =25 C Single Pulse 0.1 0.1 1 10 100 0.1 0.05 0.02 0.01 1 PDM t T o Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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